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| IXTH 12N120 Power MOSFET, Avalanche Rated High Voltage Preliminary Data Sheet VDSS = 1200 V ID (cont) = 12 A RDS(on)= 1.4 Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS PD TJ TJM Tstg Md Weight Test Conditions TJ TJ = 25C to 150C = 25C to 150C; RGS = 1 M Maximum Ratings 1200 1200 30 40 12 48 12 30 1.0 500 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J W C C C g C TO-247 AD Continuous Transient TC TC TC TC TC = 25C = 25C, pulse width limited by TJM = 25C = 25C = 25C D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain Features International standard package JEDEC TO-247 AD Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Fast switching times Mounting torque 1.13/10 Nm/lb.in. 6 300 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Applications Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1200 3 5 100 TJ = 25C TJ = 125C 25 3 1.4 V V nA A mA VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1 mA VDS = VGS, ID = 250 A VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V Advantages Easy to mount with 1 screw (isolated mounting screw hole) Space savings High power density VGS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 s, duty cycle d 2 % (c) 2004 IXYS All rights reserved DS98937E(04/04) IXTH 12N120 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 6 10 3400 VGS = 0 V, VDS = 25 V, f = 1 MHz 280 105 24 VGS = 10 V, VDS = 0.5 * VDSS, 0.5 ID25 RG = 1.5 (External) 25 35 17 95 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 22 50 0.25 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain 1 2 3 TO-247 AD Outline gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 20 V; ID = 0.5 ID25, pulse test Dim. Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 12 48 1.5 850 A A V ns Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, VR = 100 V IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXTH 12N120 Fig. 1. Output Characteristics @ 25C 12 11 10 9 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 6V 6.5V VGS = 10V 8V 7.5V 7V 20 18 16 14 6.5V VGS = 10V 8V Fig. 2. Extended Output Characteristics @ 25C I D - Amperes I D - Amperes 12 10 8 6 4 2 0 0 3 6 9 12 6V 6.5V 7V V D S - Volts Fig. 3. Output Characteristics @ 125C 12 11 10 9 8 7 6 5 4 3 2 1 0 0 4 8 12 16 20 24 5.5V 5V 28 32 36 40 6V VGS = 10V 8V 7V 6.5V 3.1 2.8 VGS = 10V V D S - Volts 15 18 21 24 27 30 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs . Junction Tem perature R D S ( o n ) - Normalized 2.5 2.2 1.9 1.6 1.3 1 0.7 0.4 -50 -25 0 25 50 75 100 125 150 I D = 6A I D = 12A I D - Amperes V D S - Volts TJ - Degrees Centigrade Fig. 6. Drain Curre nt vs . Cas e Tem pe rature 14 12 Fig. 5. RDS(on) Norm alize d to 0.5 ID25 Value vs. ID 2.8 2.6 VGS = 10V R D S ( o n ) - Normalized 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 2 4 6 2 0 TJ = 25C I D - Amperes 14 16 18 20 TJ = 125C 10 8 6 4 I D - Amperes 8 10 12 -50 -25 TC - Degrees Centigrade 0 25 50 75 100 125 150 (c) 2004 IXYS All rights reserved IXTH 12N120 Fig. 7. Input Adm ittance 16 14 12 10 8 6 TJ = 125C 4 2 0 4.5 5 5.5 6 6.5 7 7.5 25C -40C 20 18 16 TJ = -40C 25C 125C Fig. 8. Trans conductance g f s - Siemens I D - Amperes 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 V G S - Volts Fig. 9. Source Current vs. Source -To-Drain Voltage 36 33 30 27 24 10 9 8 7 VDS = 600V I D = 6A I G = 10mA I D - Amperes Fig. 10. Gate Charge I S - Amperes VG S - Volts TJ = 25C 21 18 15 12 9 6 3 0 0.4 0.5 0.6 0.7 0.8 0.9 1 TJ = 125C 6 5 4 3 2 1 0 V S D - Volts 0 10 20 30 40 50 60 70 80 90 100 Q G - nanoCoulombs Fig. 12. Maxim um Trans ient Therm al Resistance 1.00 Fig. 11. Capacitance 10000 f = 1MHz Capacitance - picoFarads C iss 1000 C oss R( t h ) J C - C / W 40 0.10 100 C rss 10 0 5 10 15 0.01 V D S - Volts 20 25 30 35 1 10 100 1000 Pulse Width - milliseconds IXYS reserves the right to change limits, test conditions, and dimensions. |
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